K9F2G08U0M datasheet, K9F2G08U0M pdf, K9F2G08U0M data sheet, datasheet, data sheet, pdf, Samsung Electronic, FLASH MEMORY. K9F2G08U0M Datasheet PDF Download – FLASH MEMORY, K9F2G08U0M data sheet. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications.

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However, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula.

Cycle 00h 00h 90h FFh 80h 80h 85h 60h 85h 05h 70h 2nd. The Page Program k9f2y08u0m command 10h initiates the programming process. A recovery time of minimum 10?

K9F2G08U0M-YCB0 Price & Stock | DigiPart

The device may output random data in a page instead of the consecutive sequential data by writing random data output command. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion.

Added addressing method for program operation 0. The K9F2G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non volatility. Once the program process starts, the Read Status Register command may be entered to read the status register. Since programming the last page does not employ caching, the program time has to be that of Page Program. An internal voltage detector disables all functions whenever Vcc is below about 1.

Five read cycles sequentially output the manufacturer code EChand the device code and XXh, 4th cycle ID, 50h respectively. Pb-free Package is added. The said additional block failure rate does not k9f2b08u0m those reclaimed blocks. Page 35 Draft Date Sep. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target k9f2g08u0j and copying the rest of the replaced block.


To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory.

Some commands require one bus cycle. Optical Inspection Equipment AA Flow chart to create invalid block table. VIL can undershoot to The column address of next data, which is going to be out, may be changed to the k9f2t08u0m which follows random data output command. The words other than those to be programmed do not need to be loaded. Devices with invalid block s have the same quality level as devices with all valid blocks and have the same AC and DC characteristics.

Each k9fg208u0m the 32 cells resides in a different page.


If erase operation results in an error, map out the failing block and replace it with another block. The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks. The device may include invalid blocks when first shipped. The M byte X8 device or M m9f2g08u0m X16 device physical space requires 29 X8 or 28 X16 addresses, thereby datsheet five cycles for addressing: When you place dstasheet order, your payment is made to SeekIC and not to your seller.

But if the soure page has a bit error for charge loss, accumulated copy-back operations could also accumulate bit errors. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Some other commands, like page read and block erase and page program, require two cycles: Buffer memory of the controller. PRE pin controls activation of autopage read function. Data is datasehet tREA after the falling edge of RE which also increments the internal column address counter by one. In Block Erase operation, however, only the three row address cycles are used. Recent History What is this?


256M X 8 Bit / 128M X 16 Bit NAND Flash Memory

The device supports random data input in a page. The command register remains in Read Status command mode until another valid command is written to the command register. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved.

The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page.

Refer to Figure 15 below.

Therefore, if the status register is read during a random read cycle, the read command 00h should be given before starting read cycles. The Erase Confirm command D0h following the block address loading initiates the internal erasing process.

Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. The following possible failure modes should be considered to implement a highly reliable system.

SeekIC only pays the seller after confirming you have received your order. Data in the datxsheet page can be kf92g08u0m out at 50ns 30ns, only X8 device cycle time per byte or word X16 device. Month Sales Transactions.

Writing datqsheet alone without previously entering the serial data will not initiate the programming process. Page Read and Page Program need the same five address cycles following the required command input. Refer to the qualification report for the actual data. If program operation results in an error, map out the block including the page in error and copy the target data to another block.

The command register remains in Read ID mode until further commands are issued to it. The addressing should be done in sequential order in a block.